GM17CS18163CLT-7 데이터 시트보기 (PDF) - Hynix Semiconductor

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GM17CS18163CLT-7

1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM

Hynix Semiconductor 

Read Cycle

Symbol

Parameter

tRAC

tCAC

tAA

tOAC

tRCS

tRCH

tRRH

tRAL

tCAL

tCLZ

tOH

tOHO

tOFF

tOEZ

tCDD

tRCHR

tOHR

tOFR

tWEZ

tWDD

tRDD

Access Time from RAS

Access Time from CAS

Access Time from Address

Access Time from OE

Read Command Setup Time

Read Command Hold Time to CAS

Read Command Hold Time to RAS

Column Address to RAS Lead Time

Column Address to CAS Lead Time

CAS to Output in Low-Z

Output Data Hold Time

Output Data Hold Time from OE

Output Buffer Turn-off Time

Output Buffer Turn-off Time to OE

CAS to DIN Delay Time

Read Command Hold Time from RAS

Output Data hold Time from RAS

Output Buffer turn off to RAS

Output Buffer turn off to WE

WE to DIN Delay Time

RAS to DIN Delay Time

GM71C18163C

GM71CS18163CL

GM71C(S)18163 GM71C(S)18163 GM71C(S)18163

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

Note

- 50 - 60 - 70 ns

8,9

- 13 - 15 - 18 ns 9,10,17

- 25 - 30 - 35 ns 9,11,17

- 13 - 15 - 18 ns

9

0- 0- 0-

ns

21

0- 0- 0-

ns 12,22

5- 5- 5-

ns

12

25 - 30 - 35 -

ns

15 - 18 - 23 -

ns

0- 0- 0-

ns

3- 3- 3-

ns

27

3- 3- 3-

ns

- 13 - 15 - 15

ns 13,27

- 13 - 15 - 15

ns

13

13 - 15 - 18 -

ns

5

50 - 60 - 70 -

ns

3 - 3- 3-

ns

27

- 13 - 15 - 15

ns

27

- 13 - 15 - 15

ns

13 - 15 - 18 -

ns

13 - 15 - 18 -

ns

Rev 0.1 / Apr’01

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