ACS1026T 데이터 시트보기 (PDF) - STMicroelectronics
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ACS1026T Datasheet PDF : 11 Pages
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ACS102-6T
Characteristics
Figure 7.
On-state characteristics (maximal
values)
Figure 8.
SO-8 junction to ambient thermal
resistance versus copper surface
under tab (PCB FR4, copper
thickness 35 µm)
10.00
ITM(A)
Tj max.:
Vto= 0.8 V
Rd= 500 mΩ
1.00
Tj=125°C
Tj=25°C
Rth(j-a) (°C/W)
160
140
120
100
80
60
0.10
40
20
VTM(V)
0.01
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
SCU(mm²)
100
150
200
SO-8
250
300
Figure 9.
Relative variation of critical rate Figure 10. Relative variation of critical rate of
of decrease of main current (di/dt)c
decrease of main current (di/dt)c vs
versus junction temperature
(dV/dt)c, with turn-off time < 20 ms
(dI/dt)c [Tj] / (dI/dt)c [Tj=125 °C]
12
11
10
9
8
7
6
5
4
3
2
1
Tj (°C)
0
0 10 20 30 40 50 60 70 80
Vout=300 V
90 100 110 120 130
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
(dV/dt)c (V/µs)
0.0
0.1
1
10
Vout = 400 V
100
Figure 11. Relative variation of static dV/dt
versus junction temperature
Figure 12. Relative variation of the maximal
clamping voltage versus junction
temperature (min value)
dV/dt [Tj] / dV/dt [T j=125°C]
8
7
6
5
4
3
2
1
0
25
50
Tj(°C)
75
Vout=400V
VCL [Tj] / VDRM
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
100
125
-25
0
Tj(°C)
25
50
75
100
125
5/11
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