RMDA25000 데이터 시트보기 (PDF) - Raytheon Company
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RMDA25000 Datasheet PDF : 6 Pages
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RMDA25000
23-28 GHz Driver Amplifier MMIC
Figure 4
Recommended
Assembly Diagram
2 mil Gap
Die-Attach
80Au/20Sn
RF
Input
Alumina
50-Ohm
100pF
ADVANCED INFORMATION
Vd (Positive)
10000pF
100pF 100pF
Alumina
50-Ohm
RF
Output
100pF
100pF 100pF
10000pF
L< 0.015”
Vg (Negative)
(4 Places)
Note:
Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Vd should
biased from 1 supply as shown. Vg should be biased from 1 supply.
Recommended
Procedure for
Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=250 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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