RMPA25000 데이터 시트보기 (PDF) - Raytheon Company
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RMPA25000 Datasheet PDF : 5 Pages
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RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Description
ADVANCED INFORMATION
The Raytheon RMPA25000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA25000 is a 2-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15 mm gate length Power PHEMT process and can be used
in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
18 dB small signal gain (typ.)
33 dBm saturated power out (typ.)
Circuit contains individual source vias
Chip size 4.45 mm x 3.87 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
Pin
Tc
Tstg
Rjc
Value
+6
-2
+8
2096
+20
-30 to +85
-55 to +125
8.8
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics1
Parameter
Frequency Range
Gate Voltage (Vg)2
Gain Small Signal
(Pin=-5 dBm)
Gain Variation vs.
Frequency
Power Output
at 1 dB Compression
Power Output Saturated:
(Pin=+17 dBm)
Min Typ
23.5
-0.3
13 18
+/-1
32
31.5 33
Max Unit
26 GHz
V
dB
dB
dBm
dBm
Parameter
Drain Current
at Pin=-5 dBm
Drain Current
at P1 dB Compression
Power Added Efficiency
(PAE) at P1dB
OIP3
Input Return Loss
(Pin=-5 dBm)
Output Return Loss
(Pin=-5 dBm)
Min Typ
1200
1430
22
38
12
12
Max Unit
mA
mA
%
dBm
dB
dB
www.raytheonrf.com
Note:
1. Operated at 25°C, 50 ohm system, Vd=+5V, quiescent current (Idq)=1200 mA).
2. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1200 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised January 11, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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