RMPA25000 데이터 시트보기 (PDF) - Raytheon Company
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RMPA25000 Datasheet PDF : 5 Pages
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RMPA25000
23.5-26 GHz 2 Watt Power Amplifier MMIC
Figure 3
Schematic of
Application Circuit
Drain Supply (Vd= +5 V)
(Connect to both VDA & VDB)
10,000pF
Bond Wire Ls
MMIC Chip
L 100pF
L
ADVANCED INFORMATION
RF IN
RF OUT
Figure 4
Recommended
Assembly and
Bonding Diagram
L
Ground
(Back of Chip)
100pF
L
Bond Wire Ls
10,000pF
Gate Supply (Vg)
(VGA and/or VGB)
Vg
(Negative)
Vd
(Positive)
10,000pF
2 mil Gap
10,000pF
100pF
100pF
Die-Attach
80Au/20Sn
5mil Thick
Alumina
50-Ohm
RF
Input
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheonrf.com
100pF
100pF
10,000pF
10,000pF
L< 0.015”
(4 Places)
Vg
(Negative)
Vd
(Positive)
Note: Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised January 11, 2002
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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