RMWP26001 데이터 시트보기 (PDF) - Raytheon Company
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RMWP26001 Datasheet PDF : 6 Pages
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RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=370 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Performance
Data
RMWP26001, 26GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq= 370mA
26
0
24
-2
S21
22
-4
20
18
S22
16
S11
14
-6
S21
-8
S11
S22
-10
-12
12
-14
10
-16
18
20
22
24
26
28
30
Frequency (GHz)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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