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AD8002ARZ 데이터 시트보기 (PDF) - Analog Devices

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AD8002ARZ Datasheet PDF : 21 Pages
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Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Internal Power Dissipation1
SOIC (R)
MSOP (RM)
Input Common-Mode Voltage
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering 10 sec)
Rating
13.2 V
0.9 W
0.6 W
±VS
±1.2 V
Observe power
derating curves
−65°C to +125°C
−40°C to +85°C
300°C
1 Specification is for device in free air:
8-lead SOIC: θJA = 155°C/W.
8-lead MSOP: θJA = 200°C/W.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8002 is limited by the associated rise in junction temper-
ature. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Exceeding
this limit temporarily may cause a shift in parametric perfor-
mance due to a change in the stresses exerted on the die by
the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
AD8002
Although the AD8002 is internally short-circuit protected, this
may not be sufficient to guarantee that the maximum junction
temperature (150°C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the
maximum power derating curves.
2.0
TJ = 150°C
8-LEAD SOIC PACKAGE
1.5
1.0
8-LEAD MSOP
0.5
PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
Rev. E | Page 5 of 21

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