AD8066ARZ-RL 데이터 시트보기 (PDF) - Analog Devices
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AD8066ARZ-RL Datasheet PDF : 28 Pages
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MAXIMUM POWER DISSIPATION
The maximum safe power dissipation in the AD8065/AD8066
packages is limited by the associated rise in junction
temperature (TJ) on the die. The plastic encapsulating the die
locally reaches the junction temperature. At approximately
150°C, which is the glass transition temperature, the plastic
changes its properties. Even temporarily exceeding this
temperature limit can change the stresses that the package
exerts on the die, permanently shifting the parametric
performance of the AD8065/AD8066. Exceeding a junction
temperature of 175°C for an extended time can result in
changes in the silicon devices, potentially causing failure.
The still air thermal properties of the package and PCB (θJA),
ambient temperature (TA), and total power dissipated in the
package (PD) determine the junction temperature of the die.
The junction temperature can be calculated by
TJ = TA + (PD × θJA)
The power dissipated in the package (PD) is the sum of the
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. The quiescent
power is the voltage between the supply pins (VS) times the
quiescent current (IS). Assuming the load (RL) is referenced to
midsupply, then the total drive power is VS /2 × IOUT, some
of which is dissipated in the package and some in the load
(VOUT × IOUT). The difference between the total drive power and
the load power is the drive power dissipated in the package.
( ) PD = Quiescent Power + Total Drive Power − Load Power
( ) PD = VS × IS
+
⎜⎛
⎝
VS
2
×
VOUT
RL
⎟⎞
⎠
−
V OUT 2
RL
RMS output voltages should be considered. If RL is referenced to
VS−, as in single-supply operation, then the total drive power is
VS × IOUT.
If the rms signal levels are indeterminate, then consider the
worst case, when VOUT = VS/4 for RL to midsupply.
( ) ( ) PD = VS × IS
+
VS/4 2
RL
In single-supply operation with RL referenced to VS−, worst case
is VOUT = VS/2.
AD8065/AD8066
2.0
1.5
MSOP-8
1.0
SOIC-8
SOT-23-5
0.5
0
–60 –40 –20
0
20
40
60
80 100
AMBIENT TEMPERATURE (°C)
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
Airflow increases heat dissipation, effectively reducing θJA. Also,
more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes reduce
the θJA. Care must be taken to minimize parasitic capacitances
at the input leads of high speed op amps as discussed in the
Layout, Grounding, and Bypassing Considerations section.
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the SOIC (125°C/W),
SOT-23 (180°C/W), and MSOP (150°C/W) packages on a
JEDEC standard 4-layer board. θJA values are approximations.
OUTPUT SHORT CIRCUIT
Shorting the output to ground or drawing excessive current for
the AD8065/AD8066 will likely cause catastrophic failure.
Rev. G | Page 7 of 28
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