AD829AR-EBZ 데이터 시트보기 (PDF) - Analog Devices
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AD829AR-EBZ Datasheet PDF : 20 Pages
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Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Internal Power Dissipation1
8-Lead PDIP (N)
8-Lead SOIC (R)
8-Lead CERDIP (Q)
20-Terminal LCC (E)
Differential Input Voltage2
Output Short-Circuit Duration
Storage Temperature Range
8-Lead CERDIP (Q) and 20-Terminal LCC (E)
8-Lead PDIP (N) and 8-Lead SOIC (R)
Operating Temperature Range
AD829J
AD829A
AD829S
Lead Temperature (Soldering, 60 sec)
Rating
±18 V
1.3 W
0.9 W
1.3 W
0.8 W
±6 V
Indefinite
−65°C to +150°C
−65°C to +125°C
0°C to 70°C
−40°C to +125°C
−55°C to +125°C
300°C
1 Maximum internal power dissipation is specified so that TJ does not exceed
150°C at an ambient temperature of 25°C.
2 If the differential voltage exceeds 6 V, external series protection resistors
should be added to limit the input current.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
Table 3.
Package Type
8-Lead PDIP (N)
8-Lead CERDIP (Q)
20-Lead LCC (E)
8-Lead SOIC (R)
θJA
100 (derates at 8.7 mW/°C)
110 (derates at 8.7 mW/°C)
77
125 (derates at 6 mW/°C)
Unit
°C/W
°C/W
°C/W
°C/W
AD829
METALLIZATION PHOTO
OFFSET NULL
OFFSET NULL
1
8
+VS
7
–IN
2
OUTPUT
6
0.054
(1.37)
CCOMP
5
+IN
3
–VS
4
0.067 (1.70)
SUBSTRATE CONNECTED TO +VS
Figure 3. Metallization Photo; Contact Factory for Latest Dimensions,
Dimensions Shown in Inches and (Millimeters)
2.5
2.0
PDIP
1.5
LCC
1.0
CERDIP
SOIC
0.5
0
–55 –45 –35 –25 –15 –5 5 15 25 35 45 55 65 75 85 95 105 115 125
AMBIENT TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Temperature
ESD CAUTION
Rev. I | Page 5 of 20
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