12N60C3D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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12N60C3D
Fairchild Semiconductor
12N60C3D Datasheet PDF : 8 Pages
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HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
2.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
100
VGE = 10V
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
VGE = 15V
10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
2500
2000
1500
FREQUENCY = 1MHz
CIES
1000
500
0
0
CRES
COES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V or 15V
1.0
0.5
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
100 TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
0
100
200
300
400
500
600
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
15
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
FIGURE 16. GATE CHARGE WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
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