2N4126 데이터 시트보기 (PDF) - Philips Electronics
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2N4126 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
2N4126
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−25
−25
−4
−200
−300
−100
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBEsat
Cc
Ce
fT
F
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
MIN.
IE = 0; VCB = −20 V
−
IC = 0; VEB = −3 V
−
IC = −2 mA; VCE = −1 V; note 1
120
IC = −50 mA; VCE = −1 V; note 1
60
IC = −50 mA; IB = −5 mA; note 1
−
IC = −50 mA; IB = −5 mA; note 1
−
IE = ie = 0; VCB = −5 V; f = 1 MHz
−
IC = ic = 0; VEB = −0.5 V; f = 1 MHz
−
IC = −10 mA; VCE = −20 V; f = 100 MHz 250
IC = −100 µA; VCE = −5 V; RS = 1 kΩ; −
f = 10 Hz to 15.7 kHz
MAX.
−50
−50
360
−
−400
−950
4.5
10
−
4
UNIT
nA
nA
mV
mV
pF
pF
MHz
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 Mar 25
3
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