RFK25N18 데이터 시트보기 (PDF) - Intersil
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RFK25N18 Datasheet PDF : 5 Pages
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Data Sheet
RFK25N18, RFK25N20
October 1998
File Number 1500.3
25A, 180V and 200V, 0.150 Ohm,
N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFK25N18
TO-204AE
RFK25N18
RFK25N20
TO-204AE
RFK25N20
NOTE: When ordering, use the entire part number.
Features
• 25A, 180V and 200V
• rDS(ON) = 0.150Ω
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AE
GATE (PIN 1)
SOURCE (PIN 2)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
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