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CM400DY-50H Datasheet PDF : 4 Pages
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
800
Tj=25°C
VGE=13V
600 VGE=14V
VGE=12V
VGE=11V
VGE=15V
400
VGE=20V
VGE=10V
200
VGE=9V
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
VCE=10V
600
400
200
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE=15V
4
3
2
1
Tj = 25°C
Tj = 125°C
0
0
200
400
600
800
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 800A
6
IC = 400A
4
2
IC = 160A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj=25°C
5
3
2
103
7
5
3
2
102
7
5
3
2
101
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. VCE
(TYPICAL)
102
7
5
Cies
3
2
101
7
5
3
Coes
2
100
7
Cres
5
3 VGE = 0V, Tj = 25°C
2 Cies, Coes : f = 100kHz
Cres
: f = 1MHz
10–1
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb. 2000
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