MUBW35-12E7 데이터 시트보기 (PDF) - IXYS CORPORATION
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MUBW35-12E7 Datasheet PDF : 4 Pages
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Advanced Technical Information
MUBW 35-12 E7
Output Inverter T1 - T6
Symbol
VCES
VGES
IC25
IC80
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
1200
V
± 20
V
TC = 25°C
TC = 80°C
52
A
36
A
RBSOA; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
50
A
Clamped inductive load; L = 100 µH
VCES
VCE = 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C
10
µs
non-repetitive
TC = 25°C
225
W
Symbol
VCE(sat)
VGE(th)
I
CES
IGES
td(on)
tr
td(off)
tf
Eon
E
off
Cies
QGon
RthJC
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
IC = 35 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
V
CE
=
V;
CES
V
GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 35 A
VGE = ±15 V; RG = 39 Ω
2.2 2.8 V
2.5
V
4.5
6.5 V
0.4 mA
0.4
mA
200 nA
150
ns
60
ns
700
ns
50
ns
4.2
mJ
3.5
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 15 V; IC = 35 A
(per IGBT)
2
nF
250
nC
0.55 K/W
Output Inverter D1 - D6
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
50
A
33
A
Symbol
VF
IRM
t
rr
RthJC
Conditions
IF = 35 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
V = 600 V; V = 0 V
R
GE
(per diode)
Characteristic Values
min. typ. max.
2.8 V
1.8
V
27
A
150
ns
1.19 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at TJ = 125°C)
V0 = 0.83 V; R0 = 11 mΩ
T1 - T6 / D1 - D6
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.95 V; R0 = 45 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.26V; R0 = 15 mΩ
T7 / D7
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.37 V; R0 = 62 mΩ
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.39 V; R0 = 56 mΩ
Thermal Response
D11 - D16
Rectifier Diode (typ.)
Cth1 = 0.106 J/K; Rth1 = 1.06 K/W
Cth2 = 0.79 J/K; Rth2 = 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Cth1 = 0.201 J/K; Rth1 = 0.419 K/W
Cth2 = 1.25 J/K; Rth2 = 0.131 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.116 J/K; Rth1 = 0.973 K/W
Cth2 = 0.879 J/K; Rth2 = 0.217 K/W
T7 / D7
IGBT (typ.)
Cth1 = 0.156 J/K; Rth1 = 0.545 K/W
Cth2 = 1.162 J/K; Rth2 = 0.155 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.043 J/K; Rth1 = 2.738 K/W
Cth2 = 0.54 J/K; Rth2 = 0.462 K/W
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