AGB3310 데이터 시트보기 (PDF) - ANADIGICS

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AGB3310

50Ω High Linearity Low Noise Internally Biased Wideband Gain Block

ANADIGICS 

FEATURES

• On-chip Active Bias

• DC-3400 MHz Operation Bandwidth

• +37 dBm Output IP3 at 850 MHz

• 5 dB Noise Figure at 850 MHz

• 19 dB Gain at 850 MHz

• +19 dBm P1dB

• SOT-89 Package

• Single +5 V Supply

• Case Temperature: -40 to +85 °C

AGB3310

50Ω High Linearity Low Noise

Internally Biased Wideband Gain Block

PRELIMINARY DATA SHEET - Rev 1.0

APPLICATIONS

• Cellular Base Stations for W-CDMA, CDMA,

TDMA, GSM, PCS and CDPD systems

• Fixed Wireless

• MMDS/WLL

• WLAN

S24 Package

SOT-89

PRODUCT DESCRIPTION

The AGB3310 is one of a series of high performance

InGaP HBT amplifiers designed for use in

applications requiring high linearity, low noise, and

low distortion. Active bias circuits on-chip eliminate

the need for external resistive feedback, and no

external matching components are needed for

insertion into a 50Ω system. With a high output IP3,

low noise figure, and wide band operation, the

AGB3310 is ideal for wireless infrastructure

applications such as Cellular Base Stations, MMDS,

and WLL. Offered in a low cost SOT-89 surface mount

package, the AGB3310 requires a single +5 V supply,

and typically consumes 0.4 Watts of power.

RF Input

Active

Bias

Figure 1: Block Diagram

07/2003

RF Output

/ Bias

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