CM400DU-5F 데이터 시트보기 (PDF) - Powerex
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CM400DU-5F Datasheet PDF : 4 Pages
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM400DU-5F
Units
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current** (Tc = 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (Tc = 25°C)
Mounting Torque, M6 Main Terminal
Tj
Tstg
VCES
VGES
IC
ICM
IE
IEM
Pc
–
-40 to 150
-40 to 125
250
±20
400
800*
400
800*
890
40
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Viso
2500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage*
ICES
IGES
VGE(th)
VCE(sat)
QG
VEC
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 40mA, VCE = 10V
IC = 400A, VGE = 10V, Tj = 25°C
IC = 400A, VGE = 10V, Tj = 125°C
VCC = 100V, IC = 400A, VGE = 10V
IE = 400A, VGE = 0V
–
–
–
–
3.0
4.0
–
1.2
–
1.1
–
1500
–
–
1.0
mA
0.5
µA
5.0
Volts
1.7
Volts
–
Volts
–
nC
2.0
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Cies
Coes
Cres
td(on)
tr
td(off)
tf
trr
Qrr
VCE = 10V, VGE = 0V
VCC = 100V, IC = 400A,
VGE1 = VGE2 = 10V,
RG = 6.3⍀, Resistive
Load Switching Operation
IE = 400A
IE = 400A
–
–
110
nf
–
–
7.0
nf
–
–
3.8
nf
–
–
850
ns
–
–
400
ns
–
– 1100
ns
–
–
500
ns
–
–
300
ns
–
16.0
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Per IGBT 1/2 Module
–
Rth(j-c)D
Per FWDi 1/2 Module
–
Rth(j-c´)Q
Per IGBT 1/2 Module*
–
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.14 °C/W
–
0.24 °C/W
–
0.08 °C/W
0.04 –
°C/W
* TC measured point is just under chip.
2
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