AH420 데이터 시트보기 (PDF) - TriQuint Semiconductor
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AH420 Datasheet PDF : 9 Pages
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AH420
4W High Linearity InGaP HBT Amplifier
2110-2170 MHz Reference Design (AH420-EPCB2140)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
Frequency (GHz) 2110 2140 2170 Units
Channel Power
+26 +26 +26 dBm
Power Gain
13.3 14 14 dB
Input Return Loss 14 12 10 dB
Output Return Loss 5 7.4 9 dB
ACLR
-50 -49 -50 dBc
P1dB
+35.8 +35.7 +35.2 dBm
Output IP3
At 27dBm/tone, 1MHz spacing
+49 +50 +50 dBm
Noise Figure
5.8 5.6 5.5 dB
Quiescent Current, Icq
800
mA
Vpd, Vcc
+5
V
C2
C1
R1
C7
C8
D1
C3
C5
C4
C6
C14
C15
C12
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3. Components shown on the silkscreen but not on the schematic are not used.
4. Vpd used for device power down (low=RF off)
5. The edge of C13 is placed at 65mil from AH420 RFout pin. (7.6 o @ 2140 MHz)
6. The edge of C15 is placed 60mil from the edge of C13. (7.0 o @ 2140 MHz)
7. The edge of C16 is placed 340mil from the edge of C15. (39.9 o @ 2140 MHz)
8. The edge of C14 is placed at 155mil from AH420 RFin pin. (18.2 o @ 2140 MHz)
9. The edge of C17 is placed 205mil from the edge of C14. (24.0 o @ 2140 MHz)
10. 0 Ω jumpers can be replaced with copper trace in target application.
Gain vs. Frequency
15
T=25°C
Return Loss
0
T=25°C
ACLR vs. Output Average Power vs. Frequency
-35
T=25°C
14
-5
-40
13
-10
-45
12
-15
-50
11
10
2.10
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
ACLR vs. Output Average Power vs. Temperature
-40
-20
-25
2.10
55
S11 S22
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
OIP3 vs. Output Power / tone vs. Frequency
-55
-60
24
55
2110 MHz
2140 MHz
2170 MHz
25
26
27
28
29
Output Power (dBm)
OIP3 vs. Output Power/Tone vs. Temperature
f=2140 MHz
-45
50
50
-50
45
45
-55
40
40
-60
2140 MHz
2110 MHz
2170 MHz
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
-65
35
35
23
24
25
26
27
28
20
22
24
26
28
30
20
22
24
26
28
30
Output Power (dBm)
Output Power / tone (dBm)
Output Power (dBm)
P1dB vs. Frequency vs. Temperature
38
Current vs Output Average Power vs. Frequency
1050
T=25°C
8
Noise Figure vs. Frequency
T=25°C
37
1000
7
36
35
34
2.10
+25°C
-40°C
2.12
2.14
2.16
Frequency (GHz)
950
900
+85°C
2.18
2.20
850
800
24
6
5
2110 MHz
2140 MHz
2170 MHz
25
26
27
28
Output Power (dBm)
4
29
2.10
2.12
2.14
2.16
2.18
2.20
Frequency (GHz)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 7 of 9 July 2010
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