ALD1103SBL 데이터 시트보기 (PDF) - Advanced Linear Devices
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ALD1103SBL Datasheet PDF : 9 Pages
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ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDS
Gate-source voltage, VGS
Power dissipation
Operating temperature range SBL, PBL packages
DB package
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
10.6V
10.6V
500mW
0°C to +70°C
-55°C to +125°C
-65°C to +150°C
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
Parameter
N - Channel
Symbol Min Typ Max Unit
Gate Threshold VT
Voltage
0.4 0.7 1.0 V
Test
Conditions
IDS = 10µA VGS = VDS
Offset Voltage VOS
VGS1 - VGS2
Gate Threshold
Temperature TCVT
Drift
10 mV
IDS = 100µA VGS = VDS
-1.2
mV/°C
On Drain
Current
IDS (ON) 25 40
mA
VGS = VDS = 5V
Trans-.
Gfs
conductance
5 10
mmho VDS = 5V IDS= 10mA
Mismatch
Output
Conductance
∆Gfs
GOS
0.5
%
200
µmho VDS = 5V IDS = 10mA
Drain Source RDS(ON)
ON Resistance
50 75 Ω
VDS = 0.1V VGS = 5V
Drain Source
ON Resistance ∆RDS(ON)
0.5
Mismatch
%
VDS = 0.1V VGS = 5V
Drain Source
Breakdown
Voltage
BVDSS 12
V
IDS = 10µA VGS =0V
Off Drain
Current
IDS(OFF)
Gate Leakage IGSS
Current
0.1
4 nA
4 µA
1 50 pA
10 nA
VDS =12V IGS = 0V
TA = 125°C
VDS = 0V VGS =12V
TA = 125°C
Input
Capacitance
CISS
6 10 pF
P - Channel
Min Typ Max Unit
-0.4 -0.7 -1.2 V
10 mV
-1.3
mV/°C
-8 -16
mA
2
4
mmho
0.5
%
500
µmho
180 270 Ω
0.5
%
-12
V
0.1
4 nA
4 µA
1 50 pA
10 nA
6 10 pF
Test
Conditions
IDS = -10µA VGS = VDS
IDS = -100µA VGS = VDS
VGS = VDS = -5V
VDS = -5V IDS= -10mA
VDS = -5V IDS = -10mA
VDS = -0.1V VGS = -5V
VDS = -0.1V VGS = -5V
IDS = -10µA VGS =0V
VDS = -12V VGS = 0V
TA = 125°C
VDS = 0V VGS =-12V
TA = 125°C
ALD1103
Advanced Linear Devices
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