AL5802-13 데이터 시트보기 (PDF) - Diodes Incorporated.
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AL5802-13 Datasheet PDF : 11 Pages
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Package Thermal Data
Characteristic
Power Dissipation (Note 5) @ TA = +25°C
Power Dissipation (Note 6) @ TA = +25°C
Power Dissipation (Note 7) @ TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ TA = +25°C
Thermal Resistance, Junction to Ambient Air (Note 7) @ TA = +25°C
Notes:
5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
AL5802
Symbol
PD
RθJA
Value
0.37
0.87
1
335
143
120
Unit
W
°C/W
Recommended Operating Conditions
Symbol
VBIAS
VOUT
ILED
TA
Parameter
Supply voltage range
OUT voltage range
LED pin current (Note 8)
Operating ambient temperature range
Note:
8. Subject to ambient temperature, power dissipation and PCB.
Min
Max
Unit
4.5
30
0.8
30
V
10
120
mA
-40
+125
°C
Electrical Characteristics – NPN Transistor – Q1 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CEO
V(BR)EBO
ICEX
IBL
Characteristic
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
hFE
DC Current Gain
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage
Test Condition
IC = 1.0mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 10mA, IB = 1.0mA
Min Typ Max Unit
40
—
—
V
6.0
—
—
V
—
—
50
nA
—
—
50
nA
40
—
—
70
—
—
—
100
—
300
—
—
0.20
V
0.65
— 0.85
V
Electrical Characteristics – NPN Pre-biased Transistor – Q2 (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(SAT)
hFE
R1
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 9)
DC Current Gain (Note 9)
Input Resistance
*Characteristics of transistor only.
Note:
9. Short duration pulse test used to minimize self-heating effect.
Test Condition
IC = 50μA, IE = 0
IC = 1mA, IB = 0
IE = 50μA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
IC = 10mA, IB = 1mA
VCE = 5V, IC = 150mA
—
Min
Typ Max Unit
30
—
—
V
30
—
—
V
5.0
—
—
V
—
—
0.5 µA
—
—
0.5 µA
—
—
0.3
V
100
—
—
—
7
10
13
kΩ
AL5802
Document number: DS35516 Rev. 9 - 2
3 of 11
www.diodes.com
March 2014
© Diodes Incorporated
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