ALD1105PB 데이터 시트보기 (PDF) - Advanced Linear Devices

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ALD1105PB

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET

Advanced Linear Devices 

ABSOLUTE MAXIMUM RATINGS

Drain-source voltage, VDS

Gate-source voltage, VGS

Power dissipation

Operating temperature range SBL, PBL packages

DB package

Storage temperature range

Lead temperature, 10 seconds

CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.

10.6V

10.6V

500mW

0°C to +70°C

-55°C to +125°C

-65°C to +150°C

+260°C

OPERATING ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified

N - Channel

Parameter Symbol Min Typ Max Unit

Gate Threshold VT

Voltage

0.4 0.7 1.0 V

Test

Conditions

IDS = 1µA VGS = VDS

Offset Voltage VOS

VGS1 - VGS2

2

10 mV

IDS = 10µA VGS = VDS

Gate Threshold

Temperature TCVT

-1.2

mV/°C

Drift

On Drain

Current

IDS (ON) 3 4.8

mA

VGS = VDS = 5V

Trans-.

Gfs

conductance

1 1.8

mmho VDS = 5V IDS= 10mA

Mismatch

Output

Conductance

∆Gfs

GOS

0.5

%

200

µmho VDS = 5V IDS = 10mA

Drain Source RDS(ON)

ON Resistance

350 500 Ω

VDS = 0.1V VGS = 5V

Drain Source

ON Resistance ∆RDS(ON)

0.5

Mismatch

%

VDS = 0.1V VGS = 5V

Drain Source

Breakdown

Voltage

BVDSS 12

V

IDS = 1µA VGS =0V

Off Drain

Current

IDS(OFF)

Gate Leakage IGSS

Current

Input

Capacitance

CISS

10 400 pA

4 nA

0.1 30 pA

1 nA

1

3 pF

VDS =12V IGS = 0V

TA = 125°C

VDS = 0V VGS =12V

TA = 125°C

P - Channel

Min Typ Max Unit

-0.4 -0.7 -1.0 V

Test

Conditions

IDS = -1µA VGS = VDS

2 10 mV

IDS = -10µA VGS = VDS

-1.3

mV/°C

-1.3 -2

mA

VGS = VDS = -5V

0.25 0.67

mmho VDS = -5V IDS= -10mA

0.5

%

40

µmho VDS = -5V IDS = -10mA

1200 1800 Ω

VDS = -0.1V VGS = -5V

0.5

%

VDS = -0.1V VGS = -5V

-12

V

10 400 pA

4 nA

1 30 pA

1 nA

1

3 pF

IDS = -1µA VGS =0V

VDS = -12V VGS = 0V

TA = 125°C

VDS = 0V VGS =-12V

TA = 125°C

ALD1105

Advanced Linear Devices

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