ALD110900A 데이터 시트보기 (PDF) - Advanced Linear Devices

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ALD110900A

QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD® PRECISION MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISTICS

OUTPUT CHARACTERISTICS

5

TA = +25°C

4

VGS-VGS(TH)=+5V

VGS-VGS(TH)=+4V

3

2

1

0

0

VGS-VGS(TH)=+3V

VGS-VGS(TH)=+2V

VGS-VGS(TH)=+1V

2

4

6

8

10

DRAIN-SOURCE ON VOLTAGE (V)

DRAIN-SOURCE ON RESISTANCE

vs. DRAIN-SOURCE ON CURRENT

2500

TA = 25°C

2000

1500

1000

VGS = VGS(TH) +4V

500

0

10

VGS = VGS(TH) +6V

100

1000

10000

DRAIN-SOURCE ON CURRENT (µA)

FORWARD TRANSFER CHARACTERISTICS

20

15

10

5

0

-4

TA = 25°C

VDS = +10V

VGS(TH) = -3.5V

VGS(TH) = -1.3V

VGS(TH) = -0.4V

VGS(TH) = 0.0V

VGS(TH) = +0.2V

VGS(TH) = +1.4V

VGS(TH) = +0.8V

-2

0

2

4

6

8 10

GATE-SOURCE VOLTAGE (V)

TRANSCONDUCTANCE vs.

AMBIENT TEMPERATURE

2.5

2.0

1.5

1.0

0.5

0

-50 -25 0

25 50 75 100 125

AMBIENT TEMPERATURE (°C)

SUBTHRESHOLD FORWARD TRANSFER

CHARACTERISTICS

100000

10000

TA = +25°C

VDS=+0.1V

VGS(TH)=0.0V

1000

100

VGS(TH)=-1.3V

10

1

0.1

0.01

VGS(TH)=-3.5V

VGS(TH)=+0.2V VGS(TH)=+0.8V

-4

-3

-2

-1

0

1

2

GATE-SOURCE VOLTAGE (V)

SUBTHRESHOLD FORWARD TRANSFER

CHARACTERISTICS

1000

100

VDS=0.1V

Slope~= 110mV/decade

10

1

0.1

0.01

VGS(th)

-0.5

VGS(th)

-0.4

VGS(th)

-0.3

VGS(th)

-0.2

VGS(th)

-0.1

GATE-SOURCE VOLTAGE (V)

VGS(th)

ALD110800/ALD110800A/ALD110900/ALD110900A

Advanced Linear Devices

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