ALD110908A 데이터 시트보기 (PDF) - Advanced Linear Devices

부품명

상세내역

제조사

ALD110908A

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY

Advanced Linear Devices 

TYPICAL PERFORMANCE CHARACTERISTICS (cont.)

DRAIN-SOURCE ON CURRENT, BIAS

CURRENT vs. AMBIENT TEMPERATURE

5

4

-55°C

-25°C

3

0°C

2

1

0

+70°C +125°C

VGS(th)-1 VGS(th) VGS(th)+1 VGS(th)+2 VGS(th)+3 VGS(th)+4

GATE- AND DRAIN-SOURCE VOLTAGE

(VGS = VDS) (V)

100000

10000

1000

DRAIN-SOURCE ON CURRENT vs.

DRAIN-SOURCE ON RESISTANCE

TA = +25°C

VGS = -4.0V to +5.4V

100

10

1

VDS = +0.1V

0.1

VDS = +10V

VDS = +5V

VDS = +1V

0.01

0.1

1

10

100

1000 10000

DRAIN-SOURCE ON RESISTANCE (KΩ)

DRAIN-SOURCE ON CURRENT, BIAS

CURRENT vs. AMBIENT TEMPERATURE

100

Zero Temperature

Coefficient (ZTC)

+125°C

50

-25°C

0

VGS(th)

VGS(th)+0.2 VGS(th)+0.4 VGS(th)+0.6 VGS(th)+0.8 VGS(th)+1.0

GATE- AND DRAIN-SOURCE VOLTAGE

(VGS = VDS) (V)

VGS(th)+4

VGS(th)+3

VGS(th)+2

VGS(th)+1

VGS(th)

GATE-SOURCE VOLTAGE vs.

DRAIN-SOURCE ON CURRENT

VDS = RON • IDS(ON) VDS = +0.5V

TA = +125°C

D VDS

VDS = +0.5V

TA = +25°C

VGS

IDS(ON)

S

VDS = +5V

TA = +125°C

VDS = +5V

TA = +25°C

VGS(th)-1

0.1

1

10

100

1000 10000

DRAIN-SOURCE ON CURRENT (µA)

DRAIN-SOURCE ON CURRENT

vs. OUTPUT VOLTAGE

5

4

TA = +25°C

3

2

VDS = +10V

VDS = +5V

1

VDS = +1V

0

VGS(th) VGS(th)+1 VGS(th)+2 VGS(th)+3 VGS(th)+4 VGS(th)+5

OUTPUT VOLTAGE (V)

OFFSET VOLTAGE vs.

AMBIENT TEMPERATURE

4

3

REPRESENTATIVE UNITS

2

1

0

-1

-2

-3

-4

-50 -25 0

25 50 75 100 125

AMBIENT TEMPERATURE (°C)

ALD110808A/ALD110808/

ALD110908A/ALD110908, Vers. 2.3

Advanced Linear Devices

6 of 12

Share Link: