PDM41258SA10SO 데이터 시트보기 (PDF) - Paradigm Technology

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PDM41258SA10SO

256K Static RAM 64K x 4-Bit

Paradigm Technology 

PDM41258

Low VCC Data Retention Waveform

1

Data Retention Mode

V CC

VIH

CE VIL

t CDR

4.5V

VDR

4.5V

tR

2

VDR

3

DON'T CARE

4

5

Data Retention Electrical Characteristics (LA Version Only)

6

Symbol Parameter

Test Conditions

Min. Typ. Max. Unit

VDR

ICCDR

VCC for Retention Data

Data Retention Current

tCDR

tR(4)

Chip Deselect to Data Retention Time

Operation Recovery Time

CE ≥ VCC – 0.2V

VIN ≥ VCC – 0.2V

or ≤ 0.2V

2

VCC = 2V

—

—

95

—

V

500 µA

7

VCC = 3V

—

350 750 µA

0

tRC

—

—

—

—

ns

ns

8

NOTES: (For three previous Electrical Characteristics tables)

1. The device is continuously selected. Chip Enable is held in its active state.

2. The address is valid prior to or coincident with the latest occuring Chip Enable.

3. At any given temperature and voltage condition, tHZCE is less than tLZCE.

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4. This parameter is sampled.

5. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured ±200 mV from steady state voltage.

6. VCC = 5V ± 5%.

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11

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Rev. 2.2 - 4/27/98

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