PDM31564SA10SO 데이터 시트보기 (PDF) - Paradigm Technology

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PDM31564SA10SO

256K x 16 CMOS 3.3V Static RAM

Paradigm Technology 

PRELIMINARY

Write Cycle 3 Timing Diagram (UB, LB Controlled)

ADDRESSES

tAS

WE

tWC

tAW

tWP

tAH

tCW

CE

tBW

UB, LB

DOUT

DIN

tLZCE(1)

tLZBE(1)

tHZWE(1)

High Impedance

tDS

tDH

Data Stable

PDM31564

AC Electrical Characteristics

Description

-8*

-10*

-12

-15

-20

WRITE Cycle

WRITE cycle time

Chip enable to end of write

Address valid to end of write

Byte pulse width

Address setup time

Address hold from end of write

Write pulse width

Data setup time

Data hold time

Byte disable to output in low Z(1, 3, 4)

Byte enable to output in high Z(1, 3, 4)

Output disable to output in low Z(1, 3, 4)

Output enable to output in high Z(1, 3, 4)

Write disable to output in low Z(1,3, 4)

Write enable to output in high Z(1, 3, 4)

* VCC = 3.3v +5%

Sym Min. Max Min. Max Min. Max. Min. Max. Min. Max. Unit

tWC

8 — 10 — 12 — 15 — 20 — ns

tCW

7 — 8 — 10 — 11 — 13 — ns

tAW

7 — 8 — 10 — 11 — 13 — ns

tBW

7 — 8 — 10 — 12 — 13 — ns

tAS

0 — 0 — 0 — 0 — 0 — ns

tAH

0 — 0 — 0 — 0 — 0 — ns

tWP

7 — 8 — 8 — 9 — 10 — ns

tDS

5 — 6 — 7 — 8 — 9 — ns

tDH

0 — 0 — 0 — 0 — 0 — ns

tLZBE 0 — 0 — 0 — 0 — 0 — ns

tHZBE — 6 — 6 — 7 — 8 — 9 ns

tLZOE 0 — 0 — 0 — 0 — 0 — ns

tHZOE — 6 — 6 — 7 — 7 — 8 ns

tLZWE 0 — 0 — 0 — 0 — 0 — ns

tHZWE — 6 6 — — 7 — 7 — 9 ns

8

Rev. 1.2 - 3/31/98

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