AM1214-175 데이터 시트보기 (PDF) - STMicroelectronics

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AM1214-175

RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS

STMicroelectronics 

AM1214-175

RF & MICROWAVE TRANSISTORS

L-BAND RADAR APPLICATIONS

........ REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

3:1 VSWR CAPABILITY

LOW THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

POUT = 160 W MIN. WITH 7.3 dB GAIN

.400 x .500 2LFL (S038)

hermetically sealed

ORDER CODE

AM1214-175

B RA ND IN G

1214-175

DESCRIPTION

The AM1214-175 device is a high power Class

C transistor specifically designed for L-Band radar

pulsed output and driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles and tempera-

tures and is capable of withstanding 3:1 output

VSWR at rated RF conditions. Low RF thermal

resistance and computerized automatic wire bond-

ing techniques ensure high reliability and product

consistency.

The AM1214-175 is supplied in the BIGPAC™ Her-

metic Metal/Ceramic package with internal

Input/Output matching structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

PDISS

IC

VCC

TJ

TSTG

Pa ra met er

Power Dissipation* (TC ≤ 100°C)

Device Current*

Collector-Supply Voltage*

Junction Temperature (Pulsed RF Operation)

Storage Temperature

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

Value

Unit

330

W

14

A

45

V

250

°C

− 65 to +200

°C

0.45

°C/W

September 1992

1/6

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