IS61LV25616-8T 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS61LV25616-8T

256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV25616

ISSI ®

AC WAVEFORMS

READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)

ADDRESS

DOUT

t RC

t AA

t OHA

PREVIOUS DATA VALID

t OHA

DATA VALID

READ1.eps

READ CYCLE NO. 2(1,3)

ADDRESS

OE

CE

LB, UB

tLZCE

DOUT

tLZB

HIGH-Z

tRC

tAA

tOHA

tDOE

tLZOE

tACE

tHZOE

tHZCE

tBA

tRC

tHZB

DATA VALID

VCC

Supply

Current

tPU

50%

Notes:

1. WE is HIGH for a Read Cycle.

2. The device is continuously selected. OE, CE, UB, or LB = VIL.

3. Address is valid prior to or coincident with CE LOW transition.

tPD

ICC

50%

ISB

UB_CEDR2.eps

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

09/29/00

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