UT8R256K1615TBDCX 데이터 시트보기 (PDF) - Aeroflex UTMC
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UT8R256K1615TBDCX Datasheet PDF : 14 Pages
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AC CHARACTERISTICS WRITE CYCLE (Pre and Post-Radiation)*
(-55°C to +125°C, VDD1 = VDD1 (min), VDD2 = VDD2 (min))
SYMBOL
PARAMETER
8R256K16-15
MIN MAX
tAVAV1
Write cycle time
15
tETWH
Device enable to end of write
10
tAVET
Address setup time for write (E1/E2- controlled)
0
tAVWL
Address setup time for write (W - controlled)
0
tWLWH
Write pulse width
10
tWHAX
Address hold time for write (W - controlled)
0
tEFAX
Address hold time for device enable (E1/E2- controlled)
0
tWLQZ2
W - controlled three-state time
0
7
tW
H
Q
2
X
W - controlled output enable time
4
tETEF
Device enable pulse width (E1/E2 - controlled)
10
T tDVWH
Data setup time
7
N tWHDX
Data hold time
0
E tWLEF
Device enable controlled write pulse width
10
tDVEF
Data setup time
7
M tEFDX
Data hold time
0
P tAVWH
Address valid to end of write
10
O tWHWL
Write disable time
4
tBLWH
BLE, BHE low to write high
10
L tBLEF
BLE, BHE low to enable high
10
E Notes :
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
V 1. Guaranteed but not tested (G high).
DE 2. Three-state is defined as 200mV change from steady-state output voltage.
IN
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
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