UPD43256BCZ-85L 데이터 시트보기 (PDF) - NEC => Renesas Technology

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UPD43256BCZ-85L

256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

NEC => Renesas Technology 

Low VCC Data Retention Characteristics

L Version (µPD43256B-L: TA = 0 to 70 ˚C)

Parameter

Symbol

Test conditions

Data retention supply voltage VCCDR CS ≥ VCC – 0.2 V

Data retention supply current ICCDR VCC = 3.0 V, CS ≥ VCC – 0.2 V

Chip deselection to data

tCDR

retention mode

Operation recovery time

tR

Note 3 µA (TA ≤ 40 ˚C)

LL Version (µPD43256B-LL: TA = 0 to 70 ˚C)

A Version (µPD43256B-A: TA = 0 to 70 ˚C)

B Version (µPD43256B-B: TA = 0 to 70 ˚C)

Parameter

Symbol

Test conditions

Data retention supply voltage VCCDR CS ≥ VCC – 0.2 V

Data retention supply current ICCDR VCC = 3.0 V, CS ≥ VCC – 0.2 V

Chip deselection to data

tCDR

retention mode

Operation recovery time

tR

Note 2 µA (TA ≤ 40 ˚C), 1 µA (TA ≤ 25 ˚C)

µPD43256B

MIN. TYP. MAX. Unit

2.0

5.5

V

0.5

20Note

µA

0

ns

5

ms

MIN. TYP. MAX. Unit

2.0

5.5

V

0.5

7Note

µA

0

ns

5

ms

15

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