AM29LV081B-70EE 데이터 시트보기 (PDF) - Advanced Micro Devices

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AM29LV081B-70EE

8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

DATA SHEET

Am29LV081B

8 Megabit (1 M x 8-Bit)

CMOS 3.0 Volt-only Uniform Sector Flash Memory

The Am29LV081B is not offered for new designs. Please contact a Spansion representative for alternates.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 2.7 to 3.6 volt read and write operations for

battery-powered applications

■ Manufactured on 0.32 µm process technology

— Compatible with 0.5 µm Am29LV081 device

■ High performance

— Access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5

MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— Sixteen 64 Kbyte sectors

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent

any program or erase operations within that

sector

Sectors can be locked in-system or via

programming equipment

Temporary Sector Unprotect feature allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing

multiple program command sequences

■ Minimum 1,000,000 write cycle guarantee

per sector

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package option

— 40-pin TSOP

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program

or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from,

or program data to, a sector that is not being

erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

■ Command sequence optimized for mass storage

— Specific addresses not required for unlock cycles

■ Embedded Algorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any

combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data

Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.

Publication# 21525 Rev: D Amendment: 6

Issue Date: October 12, 2006

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