AMP02(RevD) 데이터 시트보기 (PDF) - Analog Devices
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AMP02 Datasheet PDF : 12 Pages
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AMP02
1. RG1
2. –IN
3. +IN
4. V–
5. REFERENCE
6. OUT
7. V+
8. RG2
9. SENSE
CONNECT SUBSTRATE TO V–
DIE SIZE 0.103 X 0.116 inch, 11,948 sq. mils
(2.62 X 2.95 mm, 7.73 sq. mm)
Dice Characteristics
WAFER TEST LIMITS at VS = ؎15 V, VCM = 0 V, TA = +25؇C, unless otherwise noted.
Parameter
Symbol
Conditions
AMP02 GBC
Limits
Units
Input Offset Voltage
VIOS
200
Output Offset Voltage
VOOS
8
Power Supply
Rejection
VS = ± 4.8 V to ± 18 V
G = 1000
110
PSR
G = 100
110
G = 10
95
G=1
75
µV max
mV max
dB min
Input Bias Current
Input Offset Current
Input Voltage Range
IB
20
IOS
10
IVR
Guaranteed by CMR Tests
± 11
nA max
nA max
V min
VCM = ± 11 V
G = 1000
110
Common-Mode
CMR
G = 100
110
Rejection
G = 10
95
G=1
75
dB min
Gain Equation Accuracy
G = 50 kΩ + 1, G = 1000
RG
0.7
% max
Output Voltage Swing
VOUT
RL = 1 kΩ
± 12
V min
Supply Current
ISY
6
mA max
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP02 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. D
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