RMPA29000 데이터 시트보기 (PDF) - Raytheon Company
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RMPA29000 Datasheet PDF : 9 Pages
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Application
Information
RMPA29000
27–30 GHz 1 Watt Power
Amplifier MMIC
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution
including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded
to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Figure 1
Functional Block
Diagram
Drain Supply
(VDA & VDB)
MMIC Chip
RF IN
RF OUT
Ground
(Back of Chip)
Gate Supply
(VGA & VGB)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised January 18, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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