RMDA29000 데이터 시트보기 (PDF) - Raytheon Company
부품명
상세내역
제조사
RMDA29000 Datasheet PDF : 7 Pages
| |||
RMDA29000
27-31 GHz Driver Amplifier MMIC
Description
ADVANCED INFORMATION
The Raytheon RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMDA29000 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Features
20 dB small signal gain (typ.)
22 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 3.41 mm x 1.62 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
Rjc
Value
+6
-2
+8
360
+10
-30 to +85
-55 to +125
44
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics Parameter
Min Typ Max Unit
(At 25 °C) 50 Ohm Frequency Range
27
31 GHz
system, Vd=+5V, Gate Supply Voltage1 (Vg)
-0.4
V
Quiescent current Gain Small Signal
15
20 30 dB
(Idq)=250 mA Gain Variation
vs. Frequency
+/-1
dB
Power Output at 1 dB
Compression
21
dBm
Power Output Saturated:
(Pin=+5 dBm)
22
dBm
Parameter
Min Typ Max Unit
Drain Current Small Signal
250
mA
Drain Current at P1
dB Compression
270
mA
Power Added Efficiency
(PAE): at P1dB
8
%
OIP3
29
dBm
Input Return Loss
5
10
dB
Output Return Loss
5
8
dB
www.raytheon.com/micro
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Share Link: 