AO4443(2011) 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO4443 Datasheet PDF : 5 Pages
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AO4443
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=-20V
ID=-6A
8
6
1400
1200
1000
Ciss
800
4
2
0
0
3
6
9
12
15
18
Qg (nC)
Figure 7: Gate-Charge Characteristics
600
400
Coss
200
0
Crss
0 5 10 15 20 25 30 35 40
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
RDS(ON)
limited
10µs
100µs
1.0
TJ(Max)=150°C
0.1
TA=25°C
1ms
10ms
10s
DC
0.0
0.01
0.1
1
10
100
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
10000
1000
TA=25°C
100
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
0.001
Single Pulse
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
1000
Rev 4: August 2011
www.aosmd.com
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