AO3407AL 데이터 시트보기 (PDF) - Unspecified

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AO3407AL

P-Channel Enhancement Mode Field Effect Transistor

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AO3407A

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AO3407A/L uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable

for use as a load switch or in PWM applications.AO3407A and AO3407AL are electrically identical.-RoHS Compliant

-AO3407AL is Halogen Free

Features

VDS (V) = -30V

ID = -4.3A

(VGS = -10V)

RDS(ON) < 48mΩ (VGS = -10V)

RDS(ON) < 78mΩ (VGS = -4.5V)

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A,F

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

-30

±20

-4.3

-3.5

-20

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient AF

Maximum Junction-to-Ambient A

Maximum Junction-to-Lead C

t ≤ 10s

Steady-State

Steady-State

Symbol

Typ

RθJA

70

100

RθJL

63

Max

90

125

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

1/4

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