AO4612 데이터 시트보기 (PDF) - Unspecified

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AO4612

60V Complementary Enhancement Mode Field Effect Transistor

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AO4612

60V Complementary Enhancement

Mode Field Effect Transistor

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-60

IDSS

Zero Gate Voltage Drain Current

VDS=-48V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±20V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-1

ID(ON)

On state drain current

VGS=-10V, VDS=-5V

-20

VGS=-10V, ID=-3.2A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=-4.5V, ID=-2.8A

gFS

Forward Transconductance

VDS=-5V, ID=-3.2A

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

VGS=-10V, VDS=-30V, ID=-3.2A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-30V, RL=9.4Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

±100 nA

-2.1 -3

V

A

84 105

145

mΩ

106 135 mΩ

9

S

-0.73 -1

V

-3

A

930 1120 pF

85

pF

35

pF

7.2

9

Ω

16

20

nC

8

10 nC

2.5

nC

3.2

nC

8

12

ns

3.8 7.5 ns

31.5 48

ns

7.5

15

ns

27

35

ns

32

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

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rBe:sRisetapnectietivreatrinagti.ng, pulse width limited by junction temperature.

BC:. RTheepeRtitθiJvAeisratthinegs,upmulsoef twhiedthelirmmiatel dimbpyejudnecntcioenfrtoemmpjuenrcatiuorne.to lead R θJL and lead to ambient.

CD. The RstaθJtAicischthaerascutemrisotficthseinthFeigrmuraelsim1 ptoed6e,1n2c,e14froamrejuonbctationnedtoulseiandg R80θJµLsapnudlsleeasd, dtoutaymcbycielent0. .5% max.

ED. ThessetatetisctcshaarreapcteerrfiosrtmicesdinwFitihguthreesd1etvoic6e,1m2o,1u4ntaerdeoonbt1aine2dFuRs-in4gb8o0arµdswpituhls2eosz,.dCuotypcpyecrl,ein0a.5s%tilml aairx.environment with T A=25°C. The SOA

cEu. rTvheepsreovteidsetss aresinpgelrefoprmulseed rwaittihngth. e device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SOA curve provides a single pulse rating.

6/9

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