AO4612 데이터 시트보기 (PDF) - Unspecified
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AO4612 Datasheet PDF : 9 Pages
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AO4612
60V Complementary Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
8
VDS=-30V
ID=-3.2A
6
4
2
0
0
4
8
12
16
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
Ciss
1000
800
600
400
Coss
Crss
200
0
0
10
20
30
40
50
60
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
RDS(ON)
limited
0.1
TJ(Max)=150°C
TA=25°C
0.0
10s
DC
0.1
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100µs
1ms
10ms
0.1s
1s
100
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01 Pulse Wid0th.1(s)
1
10
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
8/9
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