AO4614B 데이터 시트보기 (PDF) - Unspecified

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AO4614B

Complementary Enhancement Mode Field Effect Transistor

Unspecified 

AO4614B

40V Dual P + N-Channel MOSFET

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

40

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1.7

ID(ON)

On state drain current

VGS=10V, VDS=5V

30

VGS=10V, ID=6A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=4.5V, ID=5A

gFS

Forward Transconductance

VDS=5V, ID=6A

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

V

1

µA

5

±100 nA

2.5

3

V

A

24

30

36

45

mΩ

30

38

19

S

0.76 1

V

2

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

410 516 650 pF

82

pF

43

pF

4.6

Ω

SWITCHING PARAMETERS

Qg (10V) Total Gate Charge

8.9 10.8 nC

Qg (4.5V) Total Gate Charge

Qgs

Gate Source Charge

VGS=10V, VDS=20V,

ID=6A

4.3 5.6 nC

2.4

nC

Qgd

Gate Drain Charge

1.4

nC

tD(on)

Turn-On DelayTime

6.4

ns

tr

Turn-On Rise Time

VGS=10V, VDS=20V, RL=3.3Ω,

3.6

ns

tD(off)

Turn-Off DelayTime

RGEN=3Ω

16.2

ns

tf

Turn-Off Fall Time

6.6

ns

trr

Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs

18

24

ns

Qrr

Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs

10

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

9

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 12

D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

Rev2 : Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

2/7

www.freescale.net.cn

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