AO4614B 데이터 시트보기 (PDF) - Unspecified

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AO4614B

Complementary Enhancement Mode Field Effect Transistor

Unspecified 

AO4614B

40V Dual P + N-Channel MOSFET

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID= -250µA, VGS=0V

-40

V

IDSS

Zero Gate Voltage Drain Current

VDS= -40V, VGS=0V

TJ=55°C

-1

µA

-5

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

±100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID= -250µA

-1.7 -2

-3

V

ID(ON)

On state drain current

VGS= -10V, VDS= -5V

-30

A

VGS= -10V, ID= -5A

36

45

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

52

65

mΩ

VGS= -4.5V, ID= -4A

50

63

gFS

Forward Transconductance

VDS= -5V, ID= -5A

13

S

VSD

Diode Forward Voltage

IS= -1A,VGS=0V

-0.76 -1

V

IS

Maximum Body-Diode Continuous Current

-2

A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS= -20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

750 940 1175 pF

97

pF

72

pF

14

Ω

SWITCHING PARAMETERS

Qg (-10V) Total Gate Charge

Qg (-4.5V) Total Gate Charge

VGS= -10V, VDS= -20V,

Qgs

Gate Source Charge

ID= -5A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

VGS= -10V, VDS= -20V, RL=4Ω,

tD(off)

Turn-Off DelayTime

RGEN=3Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs

17

22

nC

7.9 10 nC

3.4

nC

3.2

nC

6.2

ns

8.4

ns

44.8

ns

41.2

ns

21

27

ns

14

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with

AT: TAh=e25v°aClu. eThoef RvaθlJuAeisinmaenaysugrievdenwaithppthliceadtieovnicdeepmeonudnsteodnotnhe1iuns2eFr'Rs -s4pebcoiafircdbwoiathrd2doez.siCgonp. pTehre, icnuarresntitll raaitrinegnvisirobnamseednot nwitthheT A =25°C.

Tthe≤va1lu0es itnhearnmyaal greivseisntaanpcpelicraattiinogn. depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

rBes: iRsteapnecteitirvaetinragt.ing, pulse width limited by junction temperature.

9

BC:.RTehpeeRtitiθvJeA irsattihneg,spuumlsoef wthideththleimrmitaeldimbypejudnecnticoenftreommpjeurnacttuioren. to lead R θJL and lead to ambient. 12

CD..TThheeRstθaJAticiscthhaerascutmeriosftitchseinthFeirgmuarel sim1pteod6e,n1c2e,1fr4oamrejuonbcttaioinnetdo ulesaindgR<θ3J0L 0anµds lpeualdsetos,admutbyiecnytc.le 0.5% max.

DE..TThheessetatteicsctshaarraecpteerrifsotrimcseidn wFiitghutrhees d1etvoic6e,1m2,o1u4natered oobnta1inined2 FuRsi-n4gb8o0aµrds wpiuthlse2so,zd. uCtoypcpyecrl,ein0.a5%stimll aaixr.environment with

ET. AT=h2e5s°Ce .teTshtes aSrOeApecruforvremperdowviidthesthaesdinegvilceepmuloseunrtaetdingon. 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

SROeAv1cu:rJvaenp2ro0v1id0es a single pulse rating.

5/7

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