AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=10V
4
ID=2.2A
3
1000
800
Ciss
600
2
400
1
Coss
200
Crss
0
0
1
2
3
4
5
6
7
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C
TA=25°C
100µs
10.0 RDS(ON)
limited
1.0
0.1s 10ms 1ms
10µs
1s
10s DC
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
16
TJ(Max)=150°C
TA=25°C
12
8
4
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=360°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha Omega Semiconductor, Ltd.