AO7411 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor

부품명

상세내역

제조사

AO7411

P-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO7411

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±8V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-0.4

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-10

VGS=-4.5V, ID=-1.8A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=-2.5V, ID=-1.6A

VGS=-1.8V, ID=-1.0A

gFS

Forward Transconductance

VDS=-5V, ID=-1.8A

4

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS=-4.5V, VDS=-10V,

ID=-1.8A

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=5.6Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-1.8A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

±100 nA

-0.55 -0.8 V

A

95 120

mΩ

129 160

121 150 mΩ

155 200 mΩ

7

S

-0.83 -1

V

-0.6 A

524

pF

93

pF

73

pF

12

Ω

6.24

nC

0.52

nC

1.84

nC

10.5

ns

11.8

ns

54.5

ns

24.7

ns

24.7

ns

8.2

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

SOA curve provides a single pulse rating.

Rev3: August 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

Share Link: