AO7412L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO7412L Datasheet PDF : 4 Pages
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AO7412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7412 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7412 is Pb-free (meets ROHS
& Sony 259 specifications). AO7412L is a Green
Product ordering option. AO7412 and AO7412L are
electrically identical.
Features
VDS (V) = 30V
ID = 2.1 A (VGS = 10V)
RDS(ON) < 90mΩ (VGS = 10V)
RDS(ON) < 100mΩ (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 2.5V)
SC-70-6
(SOT-323)
Top View
D
D
D
D
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
2.1
1.7
10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
175
200
200
250
Maximum Junction-to-Lead C
Steady-State
RθJL
130
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
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