AO7411 데이터 시트보기 (PDF) - Unspecified

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AO7411

P-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO7411

P-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

-20

IDSS

Zero Gate Voltage Drain Current

VDS=-16V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS=±8V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=-250µA

-0.4

ID(ON)

On state drain current

VGS=-4.5V, VDS=-5V

-10

VGS=-4.5V, ID=-1.8A

RDS(ON) Static Drain-Source On-Resistance

TJ=125°C

VGS=-2.5V, ID=-1.6A

VGS=-1.8V, ID=-1.0A

gFS

Forward Transconductance

VDS=-5V, ID=-1.8A

4

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=-10V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Qgs

Qgd

tD(on)

tr

tD(off)

tf

trr

Qrr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS=-4.5V, VDS=-10V,

ID=-1.8A

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-4.5V, VDS=-10V, RL=5.6Ω,

RGEN=3Ω

Turn-Off Fall Time

Body Diode Reverse Recovery Time IF=-1.8A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-1.8A, dI/dt=100A/µs

Typ Max Units

V

-1

µA

-5

±100 nA

-0.55 -0.8 V

A

95 120

mΩ

129 160

121 150 mΩ

155 200 mΩ

7

S

-0.83 -1

V

-0.6 A

524

pF

93

pF

73

pF

12

Ω

6.24

nC

0.52

nC

1.84

nC

10.5

ns

11.8

ns

54.5

ns

24.7

ns

24.7

ns

8.2

nC

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

SOA curve provides a single pulse rating.

Rev3: August 2005

2/4

www.freescale.net.cn

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