AOB410L 데이터 시트보기 (PDF) - Unspecified
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AOB410L Datasheet PDF : 7 Pages
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AOT410L/AOB410L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
320
40
280 di/dt=800A/µs
125ºC
35
240
Qrr
200
160
30
25
25ºC
125ºC
20
120 Irm
15
80
0
25ºC
10
5
10 15 20 25 30
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
280
40
240 Is=20A
125ºC
200
30
160
25ºC
20
120 Qrr
125ºC
80
10
40 Irm
25ºC
0
0
0
200
400
600
800 1000
di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
40
5
35
di/dt=800A/µs
30
trr
4
25ºC
3
25
20
S
15
2
125ºC
25ºC
1
125ºC
0
10
0
-1
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
50
2
Is=20A
40
125ºC
1.5
30
25ºC
trr
1
20
25ºC
0.5
10
S
125º
0
0
0
200
400
600
800
1000
di/dt (A/µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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