AOD407(2011) 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOD407 Datasheet PDF : 6 Pages
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AOD407
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
IDSS
Zero Gate Voltage Drain Current
VDS=-48V, VGS=0V
TJ=55°C
-0.003 -1
µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5 -2.1 -3
V
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-12A
TJ=125°C
91 115
mΩ
150
VGS=-4.5V, ID=-8A
114 150 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-12A
12.8
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.76 -1
V
IS
Maximum Body-Diode Continuous Current
-12
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=-30V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-12A
Qgd
tD(on)
tr
tD(off)
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=2.5Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-12A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
987 1185 pF
114
pF
46
pF
7
10
Ω
15.8 20 nC
7.4
9
nC
3
nC
3.5
nC
9
ns
10
ns
25
ns
11
ns
27.5 35
ns
30
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev 7 : May 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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