AOD438L 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOD438L Datasheet PDF : 5 Pages
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AOD438
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1
1.8
3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
85
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
VGS=4.5V, ID=20A
TJ=125°C
2.8
3.5
mΩ
4.4 5.5
4.4 5.5 mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
106
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72 1
V
IS
Maximum Body-Diode Continuous Current
85
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3200 3840 pF
590
pF
414
pF
0.54 0.7
Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/µs
IF=20A, dI/dt=100A/µs
63
76
nC
33
40
nC
8.6
nC
17.6
nC
12
ns
15.5
ns
40
ns
14
ns
34
41
ns
30
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev 2: July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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