AOD405 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AOD405 Datasheet PDF : 4 Pages
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AOD405, AOD405L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=55°C
-0.003 -1
µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2 -2 -2.4 V
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-40
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-18A
VGS=-4.5V, ID=-10A
TJ=125°C
24.5 32
mΩ
36
43
41
60 mΩ
gFS
Forward Transconductance
VDS=-5V, ID=-18A
17
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.76 -1
V
IS
Maximum Body-Diode Continuous Current
-18
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
920 1100 pF
190
pF
122
pF
3.6 4.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-18A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=0.82Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-18A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs
18.7 23 nC
9.7 11.7 nC
2.54
nC
5.4
nC
9
13
ns
25
35
ns
20
30
ns
12
18
ns
21.4 26
ns
13
16
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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