AOD421 데이터 시트보기 (PDF) - Unspecified

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AOD421

P-Channel Enhancement Mode Field Effect Transistor

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AOD421

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD

protected.

Features

VDS (V) = -20V

ID = -12.5 A (VGS = -10V)

RDS(ON) < 75mΩ (VGS = -10V)

RDS(ON) < 95mΩ (VGS = -4.5V)

RDS(ON) < 145mΩ (VGS = -2.5V)

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current G

TA=70°C

ID

Pulsed Drain Current C

IDM

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range TJ, TSTG

Maximum

-20

±12

-12.5

-8.9

-30

18.8

9.4

2

1.33

-55 to 175

Thermal Characteristics

Parameter

Symbol

Typ

Max

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

23

50

28

60

Maximum Junction-to-Case B

Steady-State

RθJC

6

8

Units

V

V

A

W

W

°C

Units

°C/W

°C/W

°C/W

1/6

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