AOD421 데이터 시트보기 (PDF) - Unspecified
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AOD421 Datasheet PDF : 6 Pages
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AOD421
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
ID=-12.5A
4
800
Ciss
600
3
400
2
1
0
0
1
2
3
4
5
6
-Qg (nC)
Figure 7: Gate-Charge Characteristics
200
Coss
Crss
0
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
TJ(Max)=175C, TA=25°C
10
10µs
100µs
DC
1
RDS(ON)
limited
1ms
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
90
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01 0.1
TJ(Max)=175°C
TC=25°C
1
10 100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
case (Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=8°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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