AON6506 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AON6506 Datasheet PDF : 6 Pages
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AON6506
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=15V
ID=20A
8
6
4
2
0
0
10
20
30
40
50
Qg (nC)
Figure 7: Gate-Charge Characteristics
4000
3500
3000
Ciss
2500
2000
1500
Coss
1000
500
Crss
0
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
RDS(ON)
limited
1.0
TJ(Max)=150°C
TC=25°C
0.1
10µs
10µs
100µs
1ms
10ms
DC
0.0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
200
TJ(Max)=150°C
160
TC=25°C
120
80
40
0
0.0001 0.001 0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=1.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
PD
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Feb. 2012
www.aosmd.com
Page 4 of 6
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