AON7460 데이터 시트보기 (PDF) - Unspecified
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AON7460 Datasheet PDF : 6 Pages
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AON7460
300V,4A N-Channel MOSFET
General Description
The AON7460 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC applications.By providing low R , DS(on) Ciss and Crss along with
guaranteed avalanche capability this device can beadopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
350V@150℃
4A
< 0.83Ω
Top View
S
D
S
D
S
D
G
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentB
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
IDSM
IAR
EAR
EAS
dv/dt
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Maximum
300
±30
4
2.5
13
1.2
1.0
2.1
66
132
5
33
13
3.1
2
-50 to 150
Typ
Max
30
40
60
75
3.1
3.7
D
S
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
°C
Units
°C/W
°C/W
°C/W
1/6
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